M2V56S40TP |
RFQ for M2V56S40TP Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| M2V56S40TP | - | - | - |
M2V56S20TP is a 4-bank x 16777216-word x 4-bit, 2V56S30TP is a 4-bank x 8388608-word x 8-bit, 2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 133MHz (-6), and are suitable for main memory or graphic memory in computer systems.
Features |
| · Single 3.3v±0.3V power supply· Max. Clock frequency 100MHz(-7/-8), 133MHz (-6)· Fully Synchronous operation referenced to clock rising edge·Single Data Rate· 4 bank operation controlled by BA0, BA1 (Bank Address)· /CAS latency- 2/3 (programmable)·Burst length- 1/2/4/8/full page (programmable)·Burst type- sequential / interleave (programmable)· Random column access·Auto precharge / All bank precharge controlled by A10·8192 refresh cycles /64ms (4 banks concurrent refresh)·Auto refresh and Self refresh·Row address A0-12 / Column address A0-9,11(x4)/ A0-9(x8)/ A0-8(x16)· LVTTL Interface·400-mil, 54-pin Thin Small Outline Package (TSOP II) with 0.8mm lead pitch |
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
| Vdd | Supply Voltage |
with respect to Vss |
-0.5 ~ 4.6 |
V |
| VddQ | Supply Voltage for Output |
with respect to VssQ |
-0.5 ~ 4.6 |
V |
| VI | Input Voltage |
with respect to Vss |
-0.5 ~ Vdd+0.5 |
V |
| VO | Output Voltage |
with respect to VssQ |
-0.5~ VddQ+0.5 |
V |
| IO | Output Current |
50 |
mA | |
| Pd | Power Dissipation |
Ta = 25 |
1000 |
mW |
| Topr | Operating Temperature |
0 ~ 70 |
||
| Tstg | Storage Temperature |
-65 ~ 150 |
